상세정보
학술지
Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane
- 발행일
- 200604
- 출처
- Applied Physics Letters, v.88 no.15, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 07MB2700, 유비쿼터스 건강관리용 모듈 시스템, 박선희
- 초록
- A process to form a self-aligned hard mask using hydrogen silsesquioxane (HSQ) was investigated. Application of the flowing property of HSQ to form a hard mask is the main concept underlying the proposed process. When HSQ is coated on a wafer, most of it remains beside the pattern. Using the thick remaining HSQ beside the pattern as a hard mask, we could reduce the height of the pattern exclusively without etching beside the pattern region by the dry etching process. The proposed mask process was successfully applied to fabricate a poly-Si elevated source drain ultrathin body silicon on insulator metal-oxide-semiconductor field effect transistor. © 2006 American Institute of Physics.
- KSP 제안 키워드
- Etching process, Field-effect transistors(FETs), Flowing property, Hydrogen Silsesquioxane, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Polycrystalline silicon(poly-Si), Silicon On Insulator(SOI), dry etching, hard mask, self-Aligned