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Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane
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- Authors
- Ki Ju Im, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Seong Jae Lee, Hyun Sang Hwang, Won Ju Cho
- Issue Date
- 2006-04
- Citation
- Applied Physics Letters, v.88, no.15, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Project Code
- 07MB2700, Ubiquitous Health Monitoring Module and System Development, Park Seon Hee
- Abstract
- A process to form a self-aligned hard mask using hydrogen silsesquioxane (HSQ) was investigated. Application of the flowing property of HSQ to form a hard mask is the main concept underlying the proposed process. When HSQ is coated on a wafer, most of it remains beside the pattern. Using the thick remaining HSQ beside the pattern as a hard mask, we could reduce the height of the pattern exclusively without etching beside the pattern region by the dry etching process. The proposed mask process was successfully applied to fabricate a poly-Si elevated source drain ultrathin body silicon on insulator metal-oxide-semiconductor field effect transistor. © 2006 American Institute of Physics.
- KSP Keywords
- Etching process, Field-effect transistors(FETs), Flowing property, Hydrogen Silsesquioxane, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Polycrystalline silicon(poly-Si), Silicon On Insulator(SOI), dry etching, hard mask, self-Aligned