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Conference Paper
GaN High Power Devices and Their Applications
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- Authors
- Jae Kyoung Mun, W. J. Chang, D. M. Kang
- Issue Date
- 2015-05
- Citation
- The Electrochemical Society (ECS) Meeting 2015 (ECS Transactions 66), v.66, no.1, pp.79-83
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Conference Paper
- Abstract
- A 100 W-class GaN transistor is developed based on the ETRI's proprietary 4-inch AlGaN/GaN high electron mobility transistor (HEMT) process and device technologies for the high power of 200 W solid state power amplifier (SSPA) applied to S-band ship radar system. For systematically comparative study of the developed power devices, two SSPA modules based on ETRI's and Cree's commercial GaN HEMTs products are fabricated and tested. After a comparison of both measured module results, good radar images for both SSPAs are successfully obtained with almost the same performances. To our best knowledge, this is the first report of SSPA ship radar with GaN power devices in Korea
- KSP Keywords
- 100 W-class, GaN HEMT, GaN power device, GaN transistor, High power device, High-electron mobility transistor(HEMT), Radar image, Radar system, S-Band, Solid State Power Amplifier, comparative study