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학술지 Extremely Low Noise Characteristics of 0.15μm Power Metamorphic High-Electron-Mobility Transistors
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심재엽, 윤형섭, 강동민, 홍주연, 이경호
Japanese Journal of Applied Physics, v.45 no.4B, pp.3380-3383
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
05MB3700, 40G 모듈(테라비트 통신용 InP RF 집적회로 기술개발), 이명현
The DC and RF characteristics of a 0.15 μm GaAs power metamorphic high electron mobility transistor (MHEMT) have been investigated and consequently, 77-GHz-band-low-noise-amplifier (LNA) millimeter-wave monolithic integrated circuits (MMICs) were fabricated using the 0.15 um power MHEMT device. The 0.15 × 100μ2 MHEMT device showed a drain saturation current of 40.4 mA/mm, an extrinsic transconductance of 857 mS/mm, and a threshold voltage of -0.64 V. For the distributions of DC characteristics across a 100mm wafer, the standard deviation of the threshold voltage and the maximum extrinsic transconductance were -0.64 짹0.03V and 810짹25mS/mm, respectively. The obtained cutoff frequency and maximum frequency of oscillation were 141 and 243 GHz, respectively. The 8 × 50 μm2 MHEMT device showed a 33.2% PAE, an 18.1 dB power gain, and a 50.1 mW output power at 5.8 GHz. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56dB at 26GHz were obtained for the 0.15 × 100μm2 MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the marked reduction of gate resistance by the T-shaped gate with a wide head and the improved device performance. The fabricated LNA MMIC using a 0.15 × 100 μm2 MHEMT device exhibited a small signal gain of 20 dB and a noise figure of 5.5 dB at a frequency range of 76 to 77 GHz. © 2006 The Japan Society of Applied Physics.
Low noise, MHEMTs, T-gate
KSP 제안 키워드
5.8 GHz, 77 GHz, Applied physics, DC Characteristics, Drain saturation current, Frequency Range, Gate resistance, High electron mobility transistor(HEMT), InGaAs channel, Indium content, Maximum Frequency