BROWSE
Detail
Conference Paper
Novel Device Structure of Large Periphery AlGaN/GaN MIS-HEMT for Current Density Improvement
Cited - time in 
Share 
Share
- Authors
- Youngrak Park, Jungjin Kim, Woojin Chang, Hyung-Seok Lee, Junbo Park, Jaekyung Mun, Sangchoon Ko
- Issue Date
- 2015-09
- Citation
- International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- In a lateral GaN transistor, conventional finger structure (CFS) is widely used. However, CFS is inefficient in terms of the usage of substrate surface area. In addition, CFS suffers from various issues such as large series resistance arising from the long ohmic electrodes, and also from self-heating issue. In this work, we demonstrate a novel device structure having dot-shaped electrodes which are fabricated by using a photo-definable polyimide. This structure improves the Ron,sp of the resulting device.
- KSP Keywords
- AlGaN/GaN MISHEMTs, Device structure, GaN transistor, Novel device, Self-heating, Substrate surface, Surface Area, current density, series resistance