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Conference Paper Novel Device Structure of Large Periphery AlGaN/GaN MIS-HEMT for Current Density Improvement
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Authors
Youngrak Park, Jungjin Kim, Woojin Chang, Hyung-Seok Lee, Junbo Park, Jaekyung Mun, Sangchoon Ko
Issue Date
2015-09
Citation
International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
Language
English
Type
Conference Paper
Abstract
In a lateral GaN transistor, conventional finger structure (CFS) is widely used. However, CFS is inefficient in terms of the usage of substrate surface area. In addition, CFS suffers from various issues such as large series resistance arising from the long ohmic electrodes, and also from self-heating issue. In this work, we demonstrate a novel device structure having dot-shaped electrodes which are fabricated by using a photo-definable polyimide. This structure improves the Ron,sp of the resulting device.
KSP Keywords
AlGaN/GaN MISHEMTs, Device structure, GaN transistor, Novel device, Self-heating, Substrate surface, Surface Area, current density, series resistance