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학술대회 Fabrication and Characteristics of 40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules
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저자
윤호경, 최광성, 권용환, 최중선, 문종태
발행일
200605
출처
Electronic Components and Technology Conference (ECTC) 2006, pp.1687-1692
DOI
https://dx.doi.org/10.1109/ECTC.2006.1645885
협약과제
06MB2100, 40G 모듈, 이명현
초록
We developed 40 Gb/s Traveling Wave Electroabsorption Modulator-Integrated DFB Laser (TW-EML) modules using several advanced technologies. This 40 Gb/s EML device adopted traveling wave electrode structures and showed the result that the measured 3 dB bandwidth of the Electrical-to-Optical (E/O) response reached about 45 GHz and the return loss (S11) was kept below -10 dB up to 50 GHz. For the module designs of this device, electrical and optical factors were mainly considered. The measured S11 of the fabricated 40 Gb/s TW-EML module was maintained below -10 dB up to about 30 GHz and the 3 dB bandwidth of the E/O response reached over 35 GHz. We also developed two types of CPW for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a System-on-Package (SoP) composed of a EML device and a driver amplifier device in a module. The measured S11 of the two-step-bended CPW was kept below - 10 dB up to 35 GHz and the measured S11 of the parallel type Coplanar Waveguide (CPW) was kept below -10 dB up to 39 GHz. ©2006 IEEE.
KSP 제안 키워드
3-dB bandwidth, 3.5 GHz, 30 GHz, 39 GHz, 40 gb/s, 45 GHz, Coplanar Waveguide Feeding(CPW), DFB laser, Driver Amplifier, Parallel type, Return loss(RL)