상세정보
학술지
Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits
- 발행일
- 201210
- 출처
- Advanced Materials, v.24 no.40, pp.5433-5439
- ISSN
- 0935-9648
- 출판사
- John Wiley & Sons
- 초록
- A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- KSP 제안 키워드
- Channel properties, Co. KGaA, Electronic circuit, Field-effect transistors(FETs), First Stokes(S1), High performance, High-k Dielectric, Hole mobility, Hole transport, N-channel, Orders of magnitude