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Journal Article
Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits
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- Authors
- Kang-Jun Baeg, Dongyoon Khim, Soon-Won Jung, Minji Kang, In-Kyu You, Dong-Yu Kim, Antonio Facchetti, Yong-Young Noh
- Issue Date
- 2012-10
- Citation
- Advanced Materials, v.24, no.40, pp.5433-5439
- ISSN
- 0935-9648
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- KSP Keywords
- Channel properties, Co. KGaA, Electronic circuit, Field Effect Transistor(FET), First Stokes(S1), High performance, High-K dielectric, Hole transport, Orders of magnitude, Organic field-effect transistor(OFET), P-Channel