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Journal Article
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
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- Authors
- Chel Jong Choi, Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jeon, Byoung Chul Park, Seong Jae Lee, Ran Ju Jung, Hyun Doek Yang, Man Chang, Hyun Sang Hwang
- Issue Date
- 2006-07
- Citation
- Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Project Code
- 06MB1600, Novel Functional Silicon Nano-Devices for Communications, Lee Seong Jae
- Abstract
- High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality. © 2006 The Electrochemical Society.
- KSP Keywords
- Electrical and structural properties, Electrode contact, Flat-band voltage, High-pressure hydrogen, Metal gate, Negative shift, Pt-Er alloy, equivalent oxide thickness, gate electrode, interface quality, interface trap density