상세정보
학술지
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
- 발행일
- 200607
- 출처
- Electrochemical and Solid-State Letters, v.9 no.7, pp.G228-G230
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality. © 2006 The Electrochemical Society.
- KSP 제안 키워드
- Electrical and structural properties, Electrode contact, Flat-band voltage, High-pressure hydrogen, Metal gate, Negative shift, Pt-Er alloy, equivalent oxide thickness, gate electrode, interface quality, interface trap density