ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Cited 1 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Chel Jong Choi, Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jeon, Byoung Chul Park, Seong Jae Lee, Ran Ju Jung, Hyun Doek Yang, Man Chang, Hyun Sang Hwang
Issue Date
2006-07
Citation
Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.2197968
Abstract
High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed near the interface between Pt-Er alloy and HfO2 film, resulting in the increase of gate electrode contact areas, causing the decrease of equivalent oxide thickness. It is further shown that high-pressure hydrogen postannealing plays a role in the reduction of PtOx and the interface trap density, leading to the negative shift of flatband voltage and the improvement of the HfO2 interface quality. © 2006 The Electrochemical Society.
KSP Keywords
Electrical and structural properties, Electrode contact, Equivalent oxide thickness, Flat-band voltage, High-pressure hydrogen, Interface trap density(Nit), Metal gate, Negative shift, Pt-Er alloy, gate electrode, interface quality