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The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor
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- Issue Date
- 2006-02
- Citation
- Synthetic Metals, v.156, no.2-4, pp.99-103
- ISSN
- 0379-6779
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 05IF1200, Development of cross-linkable organic active materials, Kim Seong Hyun
- Abstract
- We report on the influence of surface treatment using hexamethyldisilazane (HMDS) on device performance of pentacene-based thin film transistor. The samples with surface treatment using HMDS show higher mobility, lower subthreshold slope, and lower off-current compared to the untreated samples. We have also investigated the effect of various coating methods of HMDS on device performance. In the case of post-baked samples after spin coating, the improvements of mobility and on-current are larger than those of spin-coated samples. Especially a dip-coated sample has threshold voltage of -4.11 V and turn-on voltage of -0.03 V, showing the enhancement mode characteristics, which is useful for the operation as a circuit and a switch device for active-matrix displays. However, the mobility of dip-coated sample is one order lower than that of spin-coated sample, and hysteresis is larger than that of spin-coated sample. © 2005 Elsevier B.V. All rights reserved.
- KSP Keywords
- 3 V, Dip-coated, Off Current, Spin coating, Spin-coated, Subthreshold slope(SS), Surface treatments, Thin-Film Transistor(TFT), Turn-on voltage, device performance, enhancement-mode