BROWSE
Detail
Journal Article
Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)
Cited 16 time in 
Download 0 time
Share 
Download 0 time
Share
- Authors
- Young Sam Park, Kyu Jeong Chol, Nam Yeal Lee, Sung Min Yoon, Seung Yun Lee, Sang Ouk Ryu, Byoung Gon Yu
- Issue Date
- 2006-05
- Citation
- Japanese Journal of Applied Physics, v.45, no.20, pp.516-518
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Project Code
- 06MB1200, Technology of a nano scale phase change data storage, Byoung Gon Yu
- Abstract
- For the writing current reduction, we firstly proposed and successfully manufactured phase change memory device with U-shaped heater (PCM-U) device, in which TiN heater surrounds Ge2Sb2Te5 (GST). The experimental results clearly indicate that PCM-U has noticeably shorter SET operation time and 50% smaller RESET current, compared with the conventional. We suggest that the improved properties of PCM-U are due to the overlap of programmable volume. © 2006 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Phase Change Material(PCM), U-shaped, Writing current, current reduction, memory device, reset current, set operation