상세정보
학술지
Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)
- 발행일
- 200605
- 출처
- Japanese Journal of Applied Physics, v.45 no.20, pp.516-518
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 06MB1200, 나노급 상변화 정보저장 기술, 유병곤
- 초록
- For the writing current reduction, we firstly proposed and successfully manufactured phase change memory device with U-shaped heater (PCM-U) device, in which TiN heater surrounds Ge2Sb2Te5 (GST). The experimental results clearly indicate that PCM-U has noticeably shorter SET operation time and 50% smaller RESET current, compared with the conventional. We suggest that the improved properties of PCM-U are due to the overlap of programmable volume. © 2006 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Phase Change Material(PCM), U-shaped, Writing current, current reduction, memory device, reset current, set operation