상세정보
학술지
InAs-InAlGaAs Quantum Dot DFB Lasers Based on InP (001)
- 발행일
- 200602
- 출처
- IEEE Photonics Technology Letters, v.18 no.4, pp.595-597
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 05MB3800, 광통신용 반도체 양자점 레이저 다이오드 기술, 오대곤
- 초록
- The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP (001). The single mide operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 μm at room temperature. This is the first observation on the Inp-based QD DFB lasers operating around the emission wavelength window of 1.55 μm. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 μm, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm2 (176 A/cm2 for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA. © 2006 IEEE.
- KSP 제안 키워드
- As 4, Cavity length, Cleaved facets, DFB laser, Distributed feedback, Driving current, Grating structure, InP-based, Material system, Ratio value, Room-temperature