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Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
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- Authors
- Sung-Jin Choi, Chel-Jong Choi, Jee-Yeon Kim, Moongyu Jang, Yang-Kyu Choi
- Issue Date
- 2011-02
- Citation
- IEEE Transactions on Electron Devices, v.58, no.2, pp.427-432
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- This paper experimentally investigates the unique behavior of transconductance (gm)in the Schottky-barrier metaloxidesemiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of gmis observed. Thus, gmcan be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of gmis observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the gmdisappears, i.e., a complete transition from TE to TU can be enabled by the DS technique. © 2006 IEEE.
- KSP Keywords
- Barrier height(BH), Carrier injection, Field Effect Transistor(FET), Injection Efficiency, Local Maximum Point(LMP), Schottky barrier height, Thermionic emission, dopant-segregation, scaling parameter, thermally assisted tunneling, transconductance (gm)