상세정보
학술지
Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
- 저자
- 최성진, 최철종, 김지연, 장문규, 최양규
- 발행일
- 201102
- 출처
- IEEE Transactions on Electron Devices, v.58 no.2, pp.427-432
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- This paper experimentally investigates the unique behavior of transconductance (gm)in the Schottky-barrier metaloxidesemiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of gmis observed. Thus, gmcan be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of gmis observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the gmdisappears, i.e., a complete transition from TE to TU can be enabled by the DS technique. © 2006 IEEE.
- KSP 제안 키워드
- Carrier injection, Field-effect transistors(FETs), Injection Efficiency, Local Maximum Point(LMP), Schottky barrier height, Thermionic emission, dopant-segregation, scaling parameter, thermally assisted tunneling, transconductance (gm)