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Journal Article
Structure-related Characteristics of SiGe HBT and 2.4 GHz Down-Conversion Mixer
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- Authors
- Sang Heung Lee, Sang Hoon Kim, Ja Yol Lee, Hyun Cheol Bae, Seung Yun Lee, Jin Yeong Kang, Bo Woo Kim
- Issue Date
- 2006-06
- Citation
- Journal of Semiconductor Technology and Science, v.6, no.2, pp.114-118
- ISSN
- 1598-1657
- Publisher
- 대한전자공학회 (IEIE)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.
- KSP Keywords
- 2.4 GHz, Down-conversion mixer, Selective epitaxial growth(SEG), SiGe HBT, Signal characteristics, Small-signal, Structure-related, fully integrated