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Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
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- Authors
- Jing Han Chen, Jyun Ying Lin, Jung Kai Tsai, Hun Park, Gil Ho Kim, D. H. Youn, Hyun Ick Cho, Eun Jin Lee, Jung Hee Lee, C.-T. Liang, Y. F. Chen
- Issue Date
- 2006-06
- Citation
- Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- AlGaN/GaN heterostructures have been attracting a great deal of interest because of their great potential applications as light-emitting-diodes, high-electron-mobility transistors (HEMTs), and detectors operating in the visible-to-ultraviolet range. The performances of these devices are governed by the electronic properties of the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN heterostructure. In this work, we report transport measurements for an AlGaN/GaN 2DEG as functions of the magnetic field B over a wide range of temperature (4.682 K T 80 K). At the highest measurement temperature of 80 K, the longitudinal resistance is nominally Bindependent, compelling experimental evidence for Drude-Boltzmann-like transport in a 2D system.
- KSP Keywords
- 2D systems, AlGaN/GaN heterostructure, Electronic properties, High electron mobility transistor(HEMT), Longitudinal resistance, Magnetic field(MF), Potential applications, Transport measurement, Two-dimensional electron gas(2DEG), Wide range, light-emitting diode(LED)