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Conference Paper
Self-Aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate
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- Authors
- Jae Hyun Moon, Dong Jin Park, Choong Heui Chung, Yong Hae Kim, Sun Jin Yun, Jung Wook Lim, Jin Ho Lee
- Issue Date
- 2006-04
- Citation
- Materials Research Society (MRS) Meeting 2006 (Spring), pp.1-6
- Language
- English
- Type
- Conference Paper
- Abstract
- Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs). We have demonstrated a successful crystallization of large grain poly-Si films with sequential lateral solidification (SLS) method. The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to Al2O3 gate dielectric film, which was deposited by a plasma enhanced atomic layer deposition (PEALD) method. The fabricated TFT showed a field effect mobility of 95cm2/Vs, a threshold voltage of 3V and a sub-threshold swing of 0.45 V/dec.
- KSP Keywords
- Gate dielectric film, Low-temperature polycrystalline silicon(LTPS), P-Channel, Plasma-enhanced atomic layer deposition, Polycrystalline silicon(poly-Si), Sequential lateral solidification, Si film, Si surface, Silicon process, Stainless steel(SUS316), Stainless steel foil substrate