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Conference Paper
10-nm-Gate-Length n-type Schottky barrier MOSFETs with High Current Drivability
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- Authors
- Moon Gyu Jang, Yark Yeon Kim, Myung Sim Jun, Chel Jong Choi, Tae Youb Kim, Byoung Chul Park, Seong Jae Lee
- Issue Date
- 2006-06
- Citation
- Silicon Nanoelectronics Workshop (SNW) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- High current, N-type, Schottky barrier, current drivability