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Journal Article
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
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- Authors
- Youngrak Park, Jungjin Kim, Woojin Chang, Dongyun Jung, Sungbum Bae, Jaekyung Mun, Chi-Hoon Jun, Sangchoon Ko, Eunsoo Nam
- Issue Date
- 2015-05
- Citation
- Physica Status Solidi (A), v.2112, no.5, pp.1170-1173
- ISSN
- 1862-6300
- Publisher
- Wiley-VCH Verlag GmbH
- Language
- English
- Type
- Journal Article
- Abstract
- The combination of a recessed-gate structure and CF4 plasma treatment was studied to realize a normally-off operation of a AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) for power electronics applications. We verified that fluorine ions incorporated with a strong electronegativity increase the threshold voltage (Vth). In addition, CF4 plasma treatment slightly etches the AlGaN surface as deeply as 25 횇. A fabricated device exhibits a threshold voltage of as high as 2.6 V. Using a combination of gate recess and plasma treatment processes, the device demonstrates a tremendous potential of normally-off AlGaN/GaN MIS-HEMTs for power electronics applications.
- KSP Keywords
- As 2, Fluorine ions, GaN MIS-HEMT, Gate recess, High-electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Normally-Off, Power Electronics, plasma treatment, recessed gate, threshold voltage(Vth)