상세정보
학술지
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
- 발행일
- 201505
- 출처
- Physica Status Solidi (A), v.2112 no.5, pp.1170-1173
- ISSN
- 1862-6300
- 출판사
- Wiley-VCH Verlag GmbH
- 협약과제
- 14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- The combination of a recessed-gate structure and CF4 plasma treatment was studied to realize a normally-off operation of a AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) for power electronics applications. We verified that fluorine ions incorporated with a strong electronegativity increase the threshold voltage (Vth). In addition, CF4 plasma treatment slightly etches the AlGaN surface as deeply as 25 횇. A fabricated device exhibits a threshold voltage of as high as 2.6 V. Using a combination of gate recess and plasma treatment processes, the device demonstrates a tremendous potential of normally-off AlGaN/GaN MIS-HEMTs for power electronics applications.
- KSP 제안 키워드
- As 2, Fluorine ions, GaN MIS-HEMT, Gate recess, High electron mobility transistor(HEMT), Metal-insulator-semiconductor(MIS), Normally-Off, Power Electronics, plasma treatment, recessed gate, threshold voltage(Vth)