상세정보
학술지
Oxide-Silicon-Oxide Buffer Structure for Ultralow Temperature Polycrystalline Silicon Thin-Film Transistor on Plastic Substrate
- 발행일
- 200607
- 출처
- IEEE Electron Device Letters, v.27 no.7, pp.579-581
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 06MB2300, Flexible 디스플레이, 조경익
- 초록
- A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (< 120 °C ) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm2. The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm2/Vs. © 2006 IEEE.
- KSP 제안 키워드
- Absorption layer, Amorphous silicon film, Laser energy, Oxide film, Plastic substrate, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin-film transistor, Silicon oxide, Thin-Film Transistor(TFT), buffer structure, thin film(TF)