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Oxide-Silicon-Oxide Buffer Structure for Ultralow Temperature Polycrystalline Silicon Thin-Film Transistor on Plastic Substrate
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- Authors
- Yong Hae Kim, Choong Heui Chung, Jae Hyun Moon, Gi Heon Kim, Dong Jin Park, Dae Won Kim, Jung Wook Lim, Sun Jin Yun, Yoon Ho Song, Jin Ho Lee
- Issue Date
- 2006-07
- Citation
- IEEE Electron Device Letters, v.27, no.7, pp.579-581
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (< 120 °C ) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm2. The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm2/Vs. © 2006 IEEE.
- KSP Keywords
- Absorption layer, Amorphous silicon film, Laser energy, Oxide film, Plastic substrate, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin-film transistor, Silicon oxide, Thin-Film Transistor(TFT), buffer structure, thin film(TF)