상세정보
학술지
Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
- 발행일
- 201503
- 출처
- Japanese Journal of Applied Physics, v.54 no.3, pp.1-3
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- Al2O3 passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al2O3 etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad area. Subsequently, the Al film was annealed under O2 ambient. When the gate bias was -7 V, the gate leakage currents of a conventional nonpassivated HEMT, a surface-passivated Schottky-gate HEMT, and a surface-passivated MOS-HEMT were determined as 140, 96, and 4.1 μA/mm, respectively. The current collapse phenomenon in the Al2O3-surface-passivated devices was evidently suppressed compared with that in the nonpassivated HEMT.
- KSP 제안 키워드
- Al film, Etching process, Gate fabrication, Gate leakage, High electron mobility transistor(HEMT), Leakage current, MOS-HEMT, Surface passivation, Thermal oxidation, current collapse, gate bias