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Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
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- Authors
- Jeong-Jin Kim, Young-Rak Park, Hyun-Gyu Jang, Je-Ho Na, Hyun-Soo Lee, Sang-Choon Ko, Dong-Yun Jung, Hyung-Seok Lee, Jae-Kyoung Mun, Jing-Hong Lim, Jeon-Wook Yang
- Issue Date
- 2015-03
- Citation
- Japanese Journal of Applied Physics, v.54, no.3, pp.1-3
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Al2O3 passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al2O3 etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad area. Subsequently, the Al film was annealed under O2 ambient. When the gate bias was -7 V, the gate leakage currents of a conventional nonpassivated HEMT, a surface-passivated Schottky-gate HEMT, and a surface-passivated MOS-HEMT were determined as 140, 96, and 4.1 μA/mm, respectively. The current collapse phenomenon in the Al2O3-surface-passivated devices was evidently suppressed compared with that in the nonpassivated HEMT.
- KSP Keywords
- Al film, Etching process, Gate fabrication, High-electron mobility transistor(HEMT), Leakage Current, Lift-off process, MOS-HEMT, Surface passivation, Thermal oxidation, current collapse, gate bias