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Journal Article
Influence of Modulation Doping on the Subband Structure of AlGaN/GaN Single Heterojunctions
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- Authors
- Kyu Seok Lee
- Issue Date
- 2006-07
- Citation
- Journal of the Korean Physical Society, v.49, no.1, pp.209-215
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report a theoretical investigation on the in°uence of modulation n-doping on the electron sheet concentration and the subband energy of AlGaN/GaN single heterojunction. To this end, a formalism based on a variational method, for calculating the lowest subband of wurtzite Al- GaN/GaN single heterojunctions at zero temperature (T = 0 K) is developed. Piezoelectric and spontaneous polarizations, penetration of the wavefunction into the AlGaN, and Fermi-level pinning at the upper and the lower boundaries of the system are taken into account in the calculations of the subband energy and the density of free electron gas.
- KSP Keywords
- Electron gas, Fermi-level pinning, Free electrons, Single heterojunction, Variational method, Zero temperature, modulation doping, theoretical investigation