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Conference Paper
New Analysis on the Interface Trap States at Schottky Contact
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- Authors
- Myung Sim Jun, Moon Gyu Jang, Yark Yeon Kim, Chel Jong Choi, Tae Youb Kim, Byung Chul Park, Seong Jae Lee
- Issue Date
- 2006-07
- Citation
- International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- We present a simple equivalent circuit model that represents the charging dynamics of the interface states of Schottky diodes in the reverse bias condition. The interface trap states of an erbium-silicided Schottky diode are investigated from AC admittance measurement. The trap densities and the capture and emission transition times are extracted by using the equivalent circuit model.
- KSP Keywords
- AC Admittance, Interface states, Interface trap states, Reverse bias, Schottky contacts, admittance measurement, charging dynamics, equivalent circuit model(ECM), schottky diode