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Journal Article
Long-wavelength InAlGaAs VCSELs with Al2O3 Embedded Current-confinement Apertures
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- Authors
- H.-W. Song, W.S. Han, J. Kim, J.-H. Kim, S.-H. KoPark
- Issue Date
- 2006-07
- Citation
- Electronics Letters, v.42, no.14, pp.808-809
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O 3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region. 1.57m VCSELs showing an output power of over 1mW and direct modulation characteristics at 4Gbit/s are reported using these current-confinement apertures.