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Journal Article Long-wavelength InAlGaAs VCSELs with Al2O3 Embedded Current-confinement Apertures
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Authors
H.-W. Song, W.S. Han, J. Kim, J.-H. Kim, S.-H. KoPark
Issue Date
2006-07
Citation
Electronics Letters, v.42, no.14, pp.808-809
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el:20061534
Abstract
Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O 3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region. 1.57m VCSELs showing an output power of over 1mW and direct modulation characteristics at 4Gbit/s are reported using these current-confinement apertures.