ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Long-wavelength InAlGaAs VCSELs with Al2O3 Embedded Current-confinement Apertures
Cited 3 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
송현우, 한원석, 김종덕, 김종희, 박상희
발행일
200607
출처
Electronics Letters, v.42 no.14, pp.808-809
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el:20061534
협약과제
06MB1900, 광엑세스용 광집적 모듈, 오광룡
초록
Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O 3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region. 1.57m VCSELs showing an output power of over 1mW and direct modulation characteristics at 4Gbit/s are reported using these current-confinement apertures.
KSP 제안 키워드
Atomic Layer Deposition, Direct modulation, O 3, Output power, active region, current confinement, long wavelength