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Conference Paper
Two Dimensional 32×32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination
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- Authors
- Eun Soo Nam, M. S. Oh, S. E. Hong, H. S. Kim
- Issue Date
- 2006-07
- Citation
- International Conference on Optical Internet and Next Generation Network (COIN-NGNCON) 2006, pp.78-80
- Language
- English
- Type
- Conference Paper
- Abstract
- In the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP the dark current limited by the diffusion and generation-recombination. The static dark current of the InGaAs/InP PiN photodiode arrays is proportional to the number of the pixels in the array. In PiN InGaAs photodiode array structure, the diffusion currents of the each pixel due to the thermally generated minority carriers diffusing into the depletion region are accumulated to reach total leakage current. This phenomenon of pixel number dependent leakage current is due to the accumulation of the contributed diffusion current as much as ~0.02 pA/cm-2 from the each pixel photodiode comprising the array. ©2006 OSIA.
- KSP Keywords
- Current characteristics, Dark Current, InGaAs photodiode, Leakage current, Minority carrier, PIN photodiodes, Photodiode array, Semi-Insulating, array structure, depletion region, diffusion current