상세정보
학술지
Planarization of Si Ridges in Sequential Lateral Solidification Process
- 발행일
- 200607
- 출처
- Japanese Journal of Applied Physics, v.45 no.7, pp.5675-5680
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 06MB2300, Flexible 디스플레이, 조경익
- 초록
- The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor characteristics. Relevant parameters influencing the planarization process are discussed. The optimum energy for planarization corresponds to the energy at which ridge peak blunting is maximum. © 2006 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Amorphous Si films, Applied physics, Laser treatments, Planarization process, Sequential lateral solidification, Solidification Process, Thin-Film Transistor(TFT), Transistor characteristics, thin film(TF)