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Planarization of Si Ridges in Sequential Lateral Solidification Process
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- Authors
- Jae Hyun Moon, Choong Yong Sohn, Yong Hae Kim, Choong Heui Chung, Jin Ho Lee
- Issue Date
- 2006-07
- Citation
- Japanese Journal of Applied Physics, v.45, no.7, pp.5675-5680
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor characteristics. Relevant parameters influencing the planarization process are discussed. The optimum energy for planarization corresponds to the energy at which ridge peak blunting is maximum. © 2006 The Japan Society of Applied Physics.
- KSP Keywords
- Amorphous Si films, Applied physics, Laser treatments, Planarization process, Sequential lateral solidification, Solidification Process, Thin-Film Transistor(TFT), Transistor characteristics, thin film(TF)