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Electrical Characterization of Planar Buried Heterostructure SGDBR Wavelength-Tunable Laser Diodes Using the Current Derivative Method
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- 발행일
- 200607
- 출처
- Journal of the Korean Physical Society, v.49 no.1, pp.233-236
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 06MB1900, 광엑세스용 광집적 모듈, 오광룡
- 초록
- The fabrication and the characteristics of a wavelength tunable butt coupled (BT) sampledgrating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diode (LD) is described. The average threshold current was 25 mA, and the output powers of the fabricated LD were determined to be as high as 12.3 and 24.56 mW at 100 and 200 mA, respectively, with a side mode suppression ratio of about 37 dB. The series resistance and the diode ideality factor of a LD were determined to be 3.7 ¡¾ 0.2 and 1.35 ¡¾ 0.1, respectively, by exploiting an electrical derivative analysis method. The series resistance of the SGDBR region, however, decreased with increasing current, showing a high resistance (4.4 at < 60 mA), a transient (60 mA 100 mA), and low resistance regions (0.6 at > 100 mA), indicating saturation of the refractive index change.
- KSP 제안 키워드
- Analysis method, Derivative method, Distributed Bragg reflector, Electrical characterization, High resistance, Laser diode(LD), Low resistance, Threshold current, Wavelength tunable laser(WTL), buried heterostructure, diode ideality