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Conference Paper
Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
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- Issue Date
- 2005-10
- Citation
- ECS Transactions, pp.125-130
- Language
- English
- Type
- Conference Paper
- Abstract
- Zinc oxide thin films were grown in a temperature range of 70 to 180°C by means of plasma enhanced atomic layer deposition (PEALD) for the first time. The films have growth rate of 1.9횇/cycle. The XRD patterns showed more or less random orientation of ZnO films grown by PEALD, but the reduced plasma power resulted in preferred (002) orientation of films at 150°C. The sheet resistivity of films grown with oxygen plasma was too high to measure with 4 point probe and Hall measurement system. The difference of electrical property between PEALD and H2O-based ALD films is attributed to a different O/Zn atomic ratio. copyright The Electrochemical Society.
- KSP Keywords
- 4-Point probe, Atomic ratio, Growth rate, Hall measurement, More or less, Plasma power, Plasma-enhanced atomic layer deposition, Random orientation, Sheet resistivity, Temperature range, XRD patterns