상세정보
학술지
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
- 발행일
- 200604
- 출처
- Synthetic Metals, v.156 no.7-8, pp.533-536
- ISSN
- 0379-6779
- 출판사
- Elsevier
- 협약과제
- 05IF1200, 가교가 가능한 유기 능동 소재 기술 개발, 김성현
- 초록
- We report on the influence of channel length on transfer characteristics of pentacene-based thin film transistor (TFT). As the channel length is reduced from 50 to 5 μm, turn-on voltage (Vturn-on) is shifted to more positive values, regardless of surface treatments and gate insulators. Especially in case of relatively short channel TFTs having the channel length of below 10 μm, multi-channel operation behavior has been observed and resulted in hump-shaped transfer characteristics. The positive shift behavior of Vturn-on is similar to the threshold voltage reduction behavior by drain induced barrier lowering in Si devices and multi-channel operation can be explained by the channel length variation inevitably obtained after lift-off patterning of Au/Ti source-drain metal in relatively short channel TFTs. © 2006 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- AND gate, Channel Length, Gate insulator, Reduction behavior, Short channel, Si devices, Surface treatments, Thin-Film Transistor(TFT), Ti source, Turn-on voltage, drain-induced barrier lowering(DIBL)