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Journal Article
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
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- Authors
- Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Sang Chul Lim, Seong Hyun Kim, Jung Wook Lim, Sun Jin Yun, Taehyoung Zyung
- Issue Date
- 2006-04
- Citation
- Synthetic Metals, v.156, no.7-8, pp.533-536
- ISSN
- 0379-6779
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the influence of channel length on transfer characteristics of pentacene-based thin film transistor (TFT). As the channel length is reduced from 50 to 5 μm, turn-on voltage (Vturn-on) is shifted to more positive values, regardless of surface treatments and gate insulators. Especially in case of relatively short channel TFTs having the channel length of below 10 μm, multi-channel operation behavior has been observed and resulted in hump-shaped transfer characteristics. The positive shift behavior of Vturn-on is similar to the threshold voltage reduction behavior by drain induced barrier lowering in Si devices and multi-channel operation can be explained by the channel length variation inevitably obtained after lift-off patterning of Au/Ti source-drain metal in relatively short channel TFTs. © 2006 Elsevier B.V. All rights reserved.
- KSP Keywords
- AND gate, Channel Length, Gate insulator, Reduction behavior, Short channel, Si devices, Surface treatments, Thin-Film Transistor(TFT), Ti source, Turn-on voltage, drain-induced barrier lowering(DIBL)