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학술지 Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures
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저자
고영호, 김제형, 공수현, 김주성, 김택, 조용훈
발행일
201501
출처
ACS Photonics, v.2 no.4, pp.515-520
ISSN
2330-4022
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/ph500415c
협약과제
14MB1100, 소프트웨어 정의 네트워크(SDN) 기반 Flexible 광노드 핵심기술 개발, 권용환
초록
We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and successfully demonstrated efficient red color emission at 650 nm from this unique structure. The nanosized pyramid structure was fabricated by selective area growth method with nanoimprint. The different diffusion length of composite atoms and compositional pulling effect on the pyramid structure gave rise to not only compositional variation, but also high In-content InGaN of more than 40%. The InGaN DHS on nanopyramids shows high internal quantum efficiency, sub-ns fast recombination time (negligible built-in electric fields), and less efficiency droop even with the high In content. These results are important to realize efficient red emission based on InGaN material, providing possibilities for efficient photonic devices operating at the long wavelength visible region.
KSP 제안 키워드
Built-in, Compositional variation, Diffusion length, Double heterostructures, Growth method, Internal quantum efficiency, Recombination time, Red color, Selective area growth, Visible region, efficiency droop