BROWSE
Detail
Journal Article
Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures
Cited 33 time in 
Share 
Share
- Authors
- Young-Ho Ko, Je-Hyung Kim, Su-Hyun Gong, Joosung Kim, Taek Kim, Yong-Hoon Cho
- Issue Date
- 2015-01
- Citation
- ACS Photonics, v.2, no.4, pp.515-520
- ISSN
- 2330-4022
- Publisher
- American Chemical Society(ACS)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and successfully demonstrated efficient red color emission at 650 nm from this unique structure. The nanosized pyramid structure was fabricated by selective area growth method with nanoimprint. The different diffusion length of composite atoms and compositional pulling effect on the pyramid structure gave rise to not only compositional variation, but also high In-content InGaN of more than 40%. The InGaN DHS on nanopyramids shows high internal quantum efficiency, sub-ns fast recombination time (negligible built-in electric fields), and less efficiency droop even with the high In content. These results are important to realize efficient red emission based on InGaN material, providing possibilities for efficient photonic devices operating at the long wavelength visible region.
- KSP Keywords
- Built-in, Compositional variation, Diffusion length, Double heterostructures, Growth method, Internal quantum efficiency, Recombination time, Red color, Selective area growth, Visible region, efficiency droop