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Conference Paper
Semiconducting Nanowire Device Characterization for a Chemical Sensor
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- Authors
- Jong Hyurk Park, Seung Eun Moon, En Kyung Kim, Sungl Yul Maeng, G.-T. Kim
- Issue Date
- 2006-07
- Citation
- International Meeting on Chemical Sensors (IMCS) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Semiconducting Nanowire devices were fabricated using photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under several conditions like post-annealing and etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors.
- KSP Keywords
- Chemical sensors, Contact resistance(73.40.Cg), Device Characterization, E-beam Lithography, Etching process, Key factor, Post-annealing, Scanning probe, Semiconducting nanowire, Surface Potential, electrical properties(I-V curve)