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Characteristics of N-Type SB-MOSFETs using Metal-Gate & High-K
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- 발행일
- 200608
- 출처
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1
- 협약과제
- 06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- We demonstrated n-type Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) by using a low-temperature oxide dummy gate process to effectively form a high-k metal-gate structure. First, a MOS capacitor made a 5-nm-thick high-K dielectric with a tungsten electrode was fabricated. The equivalent oxide thickness and the flat-band voltage extracted by using a quantum-mechanical capacitance-voltage analysis were 1.69 nm and --0.15 V, respectively. A 2 $\mu$m-gate-length n-type SB-MOSFETs with a source and a drain of erbium silicide showed a high on/off-current ratio of about 10$^5$ at a drain voltage of 1 V. The subthreshold swing and the saturation current were 81 mV/dec and 100 $\mu$A/$\mu$m, respectively.
- KSP 제안 키워드
- Barrier Metal, Capacitance-voltage, Drain voltage, Erbium silicide, Field-effect transistors(FETs), Flat-band voltage, High-k Dielectric, Low temperature(LT), MOS capacitor, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET)