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학술지 Ni/Au Contact to Silicon Quantum Dot Light-Emitting Diodes for the Enhancement of Carrier Injection and Light Extraction Efficiency
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저자
김백현, 조창희, 박성주, 박래만, 성건용
발행일
200608
출처
Applied Physics Letters, v.89 no.6, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2236104
협약과제
06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
초록
The effect of Ni/Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated. An LED with an annealed Ni/Au contact at 400°C in air showed a lower threshold voltage compared to that of an as-deposited Ni/Au contact by forming a nickel silicide, which has a lower work function than Ni at the interface between metal layers and silicon nitride. The optical output power of the LED with the annealed Ni/Au contact was also increased due to a highly transparent NiO layer and a lowly resistant Au layer. © 2006 American Institute of Physics.
KSP 제안 키워드
As-deposited, Au layer, Carrier injection, Light-emitting diodes (leds), Nickel silicide, Output power, Quantum Dot(QD), Silicon Nitride, Silicon quantum dots, Work Function, highly transparent