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Ni/Au Contact to Silicon Quantum Dot Light-Emitting Diodes for the Enhancement of Carrier Injection and Light Extraction Efficiency
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- Authors
- Baek Hyun Kim, Chang Hee Cho, Seong Ju Park, Nae Man Park, Gun Yong Sung
- Issue Date
- 2006-08
- Citation
- Applied Physics Letters, v.89, no.6, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- The effect of Ni/Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated. An LED with an annealed Ni/Au contact at 400°C in air showed a lower threshold voltage compared to that of an as-deposited Ni/Au contact by forming a nickel silicide, which has a lower work function than Ni at the interface between metal layers and silicon nitride. The optical output power of the LED with the annealed Ni/Au contact was also increased due to a highly transparent NiO layer and a lowly resistant Au layer. © 2006 American Institute of Physics.
- KSP Keywords
- As-deposited, Au layer, Carrier injection, Light-emitting diodes (leds), Nickel silicide, Output power, Quantum Dot(QD), Silicon Nitride, Silicon quantum dots, Work Function, highly transparent