BROWSE
Detail
Conference Paper
Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate
Cited - time in 
Share 
Share
- Authors
- Yong Hae Kim, Jae Hyun Moon, Choong Heui Chung, Sun Jin Yun, Dong Jin Park, Jung Wook Lim, Yoon Ho Song, Jin Ho Lee
- Issue Date
- 2006-08
- Citation
- International Meeting on Information Display 2006, pp.1122-1125
- Language
- English
- Type
- Conference Paper
- Abstract
- The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of Al 2 O 3 gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.
- KSP Keywords
- Gap distance, Gate dielectric film, Interface oxide, O 3, Oxide interface, Plasma-enhanced atomic layer deposition, Plastic substrate, Poly-Si film, Polycrystalline silicon(poly-Si), S characteristics, Si surface