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Conference Paper Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
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Authors
Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee
Issue Date
2006-09
Citation
IUMRS International Conference in Asia (IUMRS-ICA) 2006, pp.97-100
Language
English
Type
Conference Paper
Abstract
A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.
KSP Keywords
38 GHz, Fabrication method, Heterojunction Bipolar Transistors(HBTs), High Frequency(HF), InP-based, InP/InGaAs heterojunction, MESA etching, Silicon Nitride, self-Aligned