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Analog RF-optic performance of 60 GHz electroabsorption duplexer module
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- Authors
- J.S. Sim, K.S. Choi, Y.D. Chung, S.B. Kim, J. Kim, Y.S. Kang
- Issue Date
- 2006-09
- Citation
- Passive Components and Fiber-based Devices III (APOC) 2006 (SPIE 6352), v.6352, pp.1-9
- Publisher
- SPIE
- Language
- English
- Type
- Conference Paper
- Abstract
- We proposed the vertical mode coupling structure (VMCS) for monolithic integration of optoelectronic devices. The electroabsorption duplexer (EAD) chip was fabricated by monolithically integrating both a waveguide photodiode (PD) and an electroabsorption modulator (EAM) in association with traveling wave electrodes. Using an BAD we presented a transceiver (TRx) module for dual functions of both electrical-to-optical (E/O) and optical-to-electrical (O/E) conversions at 60GHz band. The responsivity and the extinction ration of the EAD were 0.72 A/W and 20 dB at -4 Vdc, respectively. The coupling loss between the optical fiber and the device facet was as small as 1.96 dB. The small signal 3 dB bandwidth of E/O and O/E response was 25 GHz and 8 GHz, respectively. We also investigated the issues of RF packaging in which the optoelectronic and electronic amplifier devices were co-packaged in a single housing.
- KSP Keywords
- 3-dB bandwidth, 5 GHz, 60 GHz band, Coupling loss, Coupling structure, Dual function, Monolithic Integration, O and O, Optic performance, Optical fiber, RF packaging