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Oxygen Pressure Dependent Resistance-Switching Properties of Nickel-Oxide Films Grown by Using a Pulsed Laser Deposition Method
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- 발행일
- 200609
- 출처
- Journal of the Korean Physical Society, v.49 no.3, pp.1066-1070
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 05MB4900, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
- 초록
- Highly oriented polycrystalline nickel-oxide films were grown on Pt (111) substrates moderately heated by using a non-reactive pulsed laser deposition method. The oxygen pressure of the process vacuum was varied from 1 to 200 mTorr to study its effect on the composition with the other parameters fixed. The oxygen-pressure-dependent compositional, structural, and electrical properties of the nickel-oxide films were investigated by using X-ray diffraction, atomic force microscopy, scanning electron microscopy, and current-voltage measurements. From the measurements, the oxygen content during deposition was an important factor for the structural properties and for reproducible resistance-switching characteristics.
- KSP 제안 키워드
- Atomic force microscope(AFM), Current-Voltage measurements, Highly oriented, Oxide film, Oxygen content, Polycrystalline nickel, Pulsed laser deposition method, Pulsed-laser deposition(PLD), Reactive pulsed laser deposition, Scanning electron microscopy(S.E.M.), Switching properties