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학술대회 Nanocrystal Silicon Light Emitting Devices
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저자
성건용, 김경현, 허철, 신재헌
발행일
200609
출처
Passive Components and Fiber-based Devices III (APOC) 2006 (SPIE 6352), v.6352, pp.1-13
DOI
https://dx.doi.org/10.1117/12.688243
협약과제
06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
초록
An electrically driven light emission from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots embedded in silicon nitride thin films, transparent doping layers and electrodes, and surface modified structures. This paper provides an overview of progress in the device physics and fabrications of the nanocrystal silicon light emitting diodes including new device structures to improve the light extraction efficiency as well as highlights in growth of silicon quantum dots and their quantum confinement effects.
키워드
Distributed Bragg reflector, Full color emission, Light emitting diode, Nanocrystals, Quantum confinement effect, Silicon quantum dot, Tunneling
KSP 제안 키워드
Device structure, Distributed Bragg reflector, Light Emission, Light emitting device, Quantum Dot(QD), Quantum confinement effects, Silicon Nitride, Silicon photonics, Silicon quantum dots, Surface-modified, device physics