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Conference Paper Nanocrystal Silicon Light Emitting Devices
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Authors
Gun Yong Sung, Kyung Hyun Kim, Chul Huh, Jae Heon Shin
Issue Date
2006-09
Citation
Passive Components and Fiber-based Devices III (APOC) 2006 (SPIE 6352), v.6352, pp.1-13
Publisher
SPIE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1117/12.688243
Abstract
An electrically driven light emission from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots embedded in silicon nitride thin films, transparent doping layers and electrodes, and surface modified structures. This paper provides an overview of progress in the device physics and fabrications of the nanocrystal silicon light emitting diodes including new device structures to improve the light extraction efficiency as well as highlights in growth of silicon quantum dots and their quantum confinement effects.
KSP Keywords
Device structure, Light Emission, Quantum Dot(QD), Quantum confinement effects, Silicon Nitride, Silicon photonics, Silicon quantum dots, Surface-modified, device physics, electrically driven, light emitting devices