상세정보
학술대회
Nanocrystal Silicon Light Emitting Devices
- 발행일
- 200609
- 출처
- Passive Components and Fiber-based Devices III (APOC) 2006 (SPIE 6352), v.6352, pp.1-13
- 협약과제
- 06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- An electrically driven light emission from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots embedded in silicon nitride thin films, transparent doping layers and electrodes, and surface modified structures. This paper provides an overview of progress in the device physics and fabrications of the nanocrystal silicon light emitting diodes including new device structures to improve the light extraction efficiency as well as highlights in growth of silicon quantum dots and their quantum confinement effects.
- KSP 제안 키워드
- Device structure, Light Emission, Quantum Dot(QD), Quantum confinement effects, Silicon Nitride, Silicon photonics, Silicon quantum dots, Surface-modified, device physics, electrically driven, light emitting devices