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Conference Paper Influence of T-Gate Shape on the Device Characteristics in SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT
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Authors
Ho Kyun Ahn, Jong Won Lim, Hong Gu Ji, Woo Jin Chang, Jae Kyoung Mun, Hae Cheon Kim
Issue Date
2006-09
Citation
International Conference on Solid State Devices and Materials (SSDM) 2006, pp.1-2
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.7567/SSDM.2006.P-6-3
KSP Keywords
Device characteristics, Gate shape, T-Gate
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