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Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
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- Authors
- Jung Hun Lee, Seong Hyun Kim, Jae Bon Koo, Jung Wook Lim, Sang Chul Lim, Gi Heon Kim, Sun Jin Yun, Kyung Soo Suh, Chan Hoe Ku, Jin Jang
- Issue Date
- 2006-09
- Citation
- Journal of the Korean Physical Society, v.49, no.3, pp.1148-1151
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Pentacene-based organic thin film transistors (OTFTs) show a relative degradation of their electric characteristics, especially hysteresis, because the pentacene active layer is very susceptible to moisture, oxygen, and other ambient conditions. For commercial applications of organic devices, the stability of the organic materials is one of the most important issues. Therefore, if stable OTFTs are to be produced, it is necessary to develop methods to protect them from damage. In this study, an optimized buffer layer was used to reduce the hysteresis characteristics. We fabricated hysteresis-free OTFTs with less damage by using this buffer layer. We also fabricated a p-type metal-oxide semiconductor (pMOS) inverter by using OTFTs with isolation layers, and we measured its electrical properties.
- KSP Keywords
- Active Layer, Buffer layer, Commercial application, Isolation effect, Low hysteresis, Metal-oxide(MOX), Organic devices, Organic materials, Organic thin-film transistors, Thin-Film Transistor(TFT), ambient conditions