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Broadband 60 GHz Power Amplifier MMIC with Excellent Gain-Flatness
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- Authors
- Woo Jin Chang, Hong Gu Ji, Jong Won Lim, Ho Kyun Ahn, Hae Choen Kim, Seung Hyub Oh
- Issue Date
- 2006-09
- Citation
- International Conference on Solid State Devices and Materials (SSDM) 2006, pp.614-615
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper introduces the design and fabrication of broadband 60 GHz power amplifier MMIC with superior gain-flatness for IEEE802.15.3c WPAN (Wireless Personal Area Network) system. The 60 GHz power amplifier MMIC was designed using ETRI's 0.12 ㎛ GaAs pseudomorphic high electron mobility transistor (PHEMT) 4-inch process. The power amplifier was a designed 4-stage structure using the MCLFs instead of the MIM capacitors for unconditional stability of the amplifier and yield enhancement. It was used NiCr thin film resistors to have high resistance on parts of gate bias-lines so that may minimize RF signal leakage. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of 56.25 ~ 62.25 GHz, bandwidth of 6 GHz, small signal gain (S 21) of 16.5 ~ 17.2 dB, gain flatness of 0.7 dB, an input reflection coefficient (S 11) of -16 ~ -9 dB, output reflection coefficient (S 22) of -16 ~ -4 dB and output power (P out) of 13 dBm.
- KSP Keywords
- 5 GHz, 6 GHz, 60 GHz, Design and fabrication, Gain flatness, High electron mobility transistor(HEMT), High resistance, Input Reflection Coefficient, Input/Output Matching, MIM capacitor, NiCr thin film