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Conference Paper
Sub-ns Dynamics of nc-Si QDs in SiNx Matrix Grown by PECVD
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- Authors
- Jae Heon Shin, K. S. Cho, C. Huh, K. H. Kim, J. Hong, G. Y. Sung, Y. D. Chang, D. H. Lee, Yong Jai Cho
- Issue Date
- 2006-09
- Citation
- International Conference on Group IV Photonics (GFP) 2006, pp.110-112
- Language
- English
- Type
- Conference Paper
- Abstract
- Time-resolved PL characteristic of the nc-Si QDs in SiNx matrix grown by PECVD is studied. The measured PL lifetime of nc-Si QDs is about 0.43 ns. ©2006 IEEE.
- KSP Keywords
- Nc-Si, PL lifetime, Si QDs, Time-resolved PL, sub-ns