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Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
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- Authors
- Jae Bon Koo, Jung Wook Lim, Seong Hyun Kim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Sun Jin Yun, Yong Suk Yang
- Issue Date
- 2006-10
- Citation
- Electrochemical and Solid-State Letters, v.9, no.11, pp.G320-G322
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the fabrication of dual-gate organic thin-film transistors using plasma-enhanced atomic layer deposited 150 nm thick Al2O 3 and 300 nm thick parylene as gate dielectrics and pentacene as a semiconductor. The threshold voltage (Vth) is changed from 14.5 to -1.5V when the voltage bias of the top-gate electrode is changed from -10 to 20V. The voltage transfer characteristics of an inverter with a dual-gate driver transistor and a single-gate load transistor, specifically, swing range and inversion voltage, have been artificially controlled by changing the voltage bias of the top-gate electrode. © 2006 The Electrochemical Society. All rights reserved.
- KSP Keywords
- Dual-gate structure, Inversion voltage, O 3, Organic thin-film transistors, Pentacene thin-film transistors, Plasma-enhanced, Thin-Film Transistor(TFT), an inverter, atomic layer, dual gate(DG), gate dielectric