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Conference Paper
Electrical Characterization of Semiconducting Nanowire and Its Application to a Chemical Sensor
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- Authors
- Jong Hyurk Park, S-E. Moon, Eun Kyung Kim, H.-Y. Lee, K.-H. Park, G.-T. Kim
- Issue Date
- 2006-10
- Citation
- The Electrochemical Society (ECS) Meeting 2006, pp.231-237
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Conference Paper
- Abstract
- Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
- KSP Keywords
- Chemical sensors, Contact resistance(73.40.Cg), E-beam Lithography, Electrical characterization, Etching process, Key factor, Oxide nanowires, Postdeposition annealing(PDA), Scanning probe, Semiconducting Oxide, Semiconducting nanowire