상세정보
학술대회
Electrical Characterization of Semiconducting Oxide Nanowire and its Application to a Chemical Sensor
- 발행일
- 200610
- 출처
- The Electrochemical Society (ECS) Meeting 2006, pp.231-237
- 협약과제
- 06MB3100, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- Semiconducting oxide nanowire devices were fabricated using more convenient way to combine photolithography and e-beam lithography, and their electrical properties were studied. To realize the reliable device operation which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact resistance problem under post-deposition annealing or etching process using scanning probe microscopic tool to analyze IV spectroscopic and surface potential behaviors. And, its performance as a chemical sensor was also studied for several gas species. copyright The Electrochemical Society.
- KSP 제안 키워드
- Contact resistance(73.40.Cg), E-beam Lithography, Electrical characterization, Etching process, Key factor, Oxide nanowires, Postdeposition annealing(PDA), Scanning probe, Semiconducting Oxide, Surface Potential, chemical sensor