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Journal Article
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
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- Authors
- H. Park, H. J. Hyun, D. H. Kah, H. D. Kang, H. J. Kim, Y. I. Kim, Y. J. Kim, D. H. Shim, Y. I. Choi, Y. K. Choi, Jik Lee, Jong Moon Park, Kun Sik Park
- Issue Date
- 2006-10
- Citation
- Journal of the Korean Physical Society, v.49, no.4, pp.1401-1406
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Silicon sensors have been used in high energy physics, astrophysics, medical imaging, and many other fields, including industry, due to its good position resolution and its fast response. We have designed many types of silicon sensors on 6-inch masks, such as double-sided, single-sided, and diode sensors. We have researched and developed the double-sided silicon microstrip sensor for the first time in Korea. We understand the many characteristics of silicon microstrip sensors, such as the potential distribution, the electric field distribution, the leakage currents, and the capacitances, through process and device simulation programs. We optimized many fabrication process parameters and developed silicon microstrip sensors based on the simulation results. We compared the device simulation results with measurements of the electrical characteristics of the fabricated silicon microstrip sensors.