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Selective Oxidation Fin Channel MOSFET for Source/Drain Series Resistance Reduction
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- Authors
- Young Kyun Cho, Tae Moon Roh, Jong Dae Kim
- Issue Date
- 2006-10
- Citation
- Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- A fin channel with a fin dimension as small as 14 nm and gradually increased source/drain extension regions are fabricated by using a selective oxidation. Process steps to implement the proposed device are explained briefly. We are demonstrating electrical characteristics of the selective oxidation fin channel MOSFET (SoxFET) compared with the conventional fin field effect transistor (FinFET) via three-dimensional device simulation. Compared to the FinFET, the SoxFET shows a larger drive current, higher linear transconductance, lower series resistance and improved scaling down characteristics.
- KSP Keywords
- Device Simulation, Drive Current, Field-effect transistors(FETs), Fin field effect transistor(FinFET), Resistance reduction, Selective oxidation, Source/drain extension, Three dimensional(3D), electrical characteristics, scaling down, series resistance