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Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask
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- Issue Date
- 2006-10
- Citation
- Japanese Journal of Applied Physics, v.45, no.40, pp.1080-1083
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated dry etching methods for the patterning of nanosized Ge 2Sb2Te5 (GST) patterns using high-density helicon plasma etching system. It was found that GST patterns of 10-nm-order size could not be formed in a suitable way owing to the damage of undesirable under-cut when the etching process was performed in gas mixtures of Ar/Cl 2 using a SiO2 hard mask. In this work, a hard mask of TiN was therefore chosen for employing a CF4-based gas mixture for GST etching, in which the gas mixing ratios of Ar/Cl2 and Ar/CF 4 were carefully controlled for TiN and GST patterning processes, respectively. Using these optimized patterning conditions, tens-of-nanometer- sized GST line and square-dot patterns could be successfully obtained with good profiles and uniformity. © 2006 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, CF 4, Cl 2, Dot pattern, Etching process, Gas mixing, Gas mixture, High-density, Plasma Etching, TiN hard mask, dry etching