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Journal Article High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
Cited 14 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Nae Man Park, Sang Hyeob Kim, Sungl Yul Maeng, Seong Ju Park
Issue Date
2006-10
Citation
Applied Physics Letters, v.89, no.15, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2360888
Abstract
Metal-insulator-semiconductor structures, comprised of silicon quantum dot films grown by plasma-enhanced chemical vapor deposition, were fabricated on Si wafers. The devices showed a negative differential resistance, as a result of the resonant tunneling and the very high peak-to-valley current ratios of 2240 under illumination and 390 in the dark at room temperature, which are much higher than the corresponding values of other Si tunneling devices. The peak voltage was reduced down to 1.9 V by increasing the doping concentration of the wafer and reducing the device area. The structure shows promise for use in solid-state switch applications. © 2006 American Institute of Physics.
KSP Keywords
Doping concentration, Metal-insulator-semiconductor(MIS), Metal-insulator-semiconductor structures, Negative differential resistance(NDR), Plasma-enhanced chemical vapor deposition(PECVD), Quantum Dot(QD), Resonant tunneling, Room-temperature, Si wafer, Silicon quantum dots, Solid-state switch