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Conference Paper
The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress
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- Authors
- Chi Sun Hwang, Sang Hee Ko Park, Sung Mook Chung, Jeong Ik Lee, Yong Suk Yang, Lee Mi Do, Hye Yong Chu
- Issue Date
- 2006-10
- Citation
- The Electrochemical Society (ECS) Meeting 2006, pp.301-305
- Language
- English
- Type
- Conference Paper
- Abstract
- ZnO TFT was fabricated using ALD deposited materials. The temperature dependence of transfer characteristics and the degradation behavior under gate bias stress was observed. The shift of Vth under gate bias stress was explained through electron trapping and H movement. copyright The Electrochemical Society.
- KSP Keywords
- Gate bias stress, degradation behavior, electron trapping, temperature dependence, transfer characteristics