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학술지 Enhancement of Performance of Si Nanocrystal Light-Emitting Diodes by Using Ag Nanodots
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저자
허철, 신재헌, 김경현, 최철종, 조관식, 홍종철, 성건용
발행일
200610
출처
IEEE Photonics Technology Letters, v.18 no.19, pp.2068-2070
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2006.883249
협약과제
06MB1600, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
초록
Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3 ~ 6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced. © 2006 IEEE.
키워드
Ag nanodot, Light-emitting diode (LED), Silicon nanocrystal (nc-Si), Silicon nitride
KSP 제안 키워드
Ag nanodots, Contact interface, High-resolution transmission electron microscope, Light output power(Lop), Light-emitting diodes (leds), Microscope analysis, Nc-Si, Oxide layer, Si LED, Si nanocrystal, SiC film