상세정보
학술지
Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
- 발행일
- 200610
- 출처
- ETRI Journal, v.28 no.5, pp.555-560
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 04MB2600, 광엑세스용 광집적 모듈, 오광룡
- 초록
- A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 953% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.
- KSP 제안 키워드
- Experimental Data, High Voltage, Low dark current, PIN photodiodes, Passive optical network, Threshold behavior, Threshold current, high external quantum efficiency, thermal heat