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Journal Article Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
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Authors
Sahng Gi Park, Eun Deok Sim, Jeong Woo Park, Jae Sik Sim, Hyun Woo Song, Su Hwan Oh, Yong Soon Baek
Issue Date
2006-10
Citation
ETRI Journal, v.28, no.5, pp.555-560
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.06.0105.0250
Abstract
A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 953% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.
KSP Keywords
Experimental Data, High Voltage, Low dark current, PIN photodiodes, Passive optical network, Threshold behavior, Threshold current, high external quantum efficiency, thermal heat