BROWSE
Detail
Journal Article
Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
- Authors
- Sahng Gi Park, Eun Deok Sim, Jeong Woo Park, Jae Sik Sim, Hyun Woo Song, Su Hwan Oh, Yong Soon Baek
- Issue Date
- 2006-10
- Citation
- ETRI Journal, v.28, no.5, pp.555-560
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 953% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.
- KSP Keywords
- Experimental Data, High Voltage, Low dark current, PIN photodiodes, Passive optical network, Threshold behavior, Threshold current, high external quantum efficiency, thermal heat