상세정보
학술지
Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface
- 발행일
- 200611
- 출처
- IEEE Electron Device Letters, v.27 no.11, pp.896-898
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 06MB2300, Flexible 디스플레이, 조경익
- 초록
- The thin-film transistor (TFT) performances were enhanced and stabilized by the plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of an Al2O3 gate dielectric film. The authors attribute this improvement to the formation of a high-quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics and is regulated by the plasma oxidation temperature and the gap distance between the electrode and polycrystalline Si surface. © 2006 IEEE.
- KSP 제안 키워드
- Gap distance, Gate dielectric film, High-quality, Interface oxide, Oxidation temperature, Oxide interface, Plasma-enhanced atomic layer deposition, Plastic substrate, Poly-Si film, Polycrystalline silicon(poly-Si), S characteristics