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Performance Improvement of Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate by Plasma Oxidation of Polycrystalline Si Surface
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- Authors
- Yong Hae Kim, Jae Hyun Moon, Choong Heui Chung, Sun Jin Yun, Dong Jin Park, Jung Wook Lim, Yoon Ho Song, Jin Ho Lee
- Issue Date
- 2006-11
- Citation
- IEEE Electron Device Letters, v.27, no.11, pp.896-898
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- The thin-film transistor (TFT) performances were enhanced and stabilized by the plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of an Al2O3 gate dielectric film. The authors attribute this improvement to the formation of a high-quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics and is regulated by the plasma oxidation temperature and the gap distance between the electrode and polycrystalline Si surface. © 2006 IEEE.
- KSP Keywords
- Gap distance, Gate dielectric film, High-quality, Interface oxide, Oxidation temperature, Oxide interface, Plasma-enhanced atomic layer deposition, Plastic substrate, Poly-Si film, Polycrystalline silicon(poly-Si), S characteristics