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Conference Paper 1.5 μm InAlGaAsllnP VCSELs with A1203 Embedded Apertures
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Authors
Hyun Woo Song, Won Seok Han, Jong Deog Kim, Jong Hee Kim, Sang Hee KoPark
Issue Date
2006-10
Citation
IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2006, pp.444-445
Publisher
IEEE
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/LEOS.2006.279206
Abstract
We report inAlGaAs VCSELs with Al2O3 embedded apertures. Using atomic layer deposition, the current confinement apertures are fabricated by depositing of Al2O3 on air-gap surfaces of undercut apertures. 1.57 μm VCSELs showing the output power of over 1 mW and direct modulation at 4 Gbit/s are reported using these apertures. © 2006 IEEE.
KSP Keywords
Air-gap, Atomic Layer Deposition, Direct modulation, Output power, current confinement