상세정보
학술대회
1.5 μm InAlGaAsllnP VCSELs with A1203 Embedded Apertures
- 발행일
- 200610
- 출처
- IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2006, pp.444-445
- 협약과제
- 06MB1900, 광엑세스용 광집적 모듈, 오광룡
- 초록
- We report inAlGaAs VCSELs with Al2O3 embedded apertures. Using atomic layer deposition, the current confinement apertures are fabricated by depositing of Al2O3 on air-gap surfaces of undercut apertures. 1.57 μm VCSELs showing the output power of over 1 mW and direct modulation at 4 Gbit/s are reported using these apertures. © 2006 IEEE.
- KSP 제안 키워드
- Air-gap, Atomic Layer Deposition, Direct modulation, Output power, current confinement