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학술대회 1.5 μm InAlGaAsllnP VCSELs with A1203 Embedded Apertures
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저자
송현우, 한원석, 김종덕, 김종희, 박상희
발행일
200610
출처
IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2006, pp.444-445
DOI
https://dx.doi.org/10.1109/LEOS.2006.279206
협약과제
06MB1900, 광엑세스용 광집적 모듈, 오광룡
초록
We report inAlGaAs VCSELs with Al2O3 embedded apertures. Using atomic layer deposition, the current confinement apertures are fabricated by depositing of Al2O3 on air-gap surfaces of undercut apertures. 1.57 μm VCSELs showing the output power of over 1 mW and direct modulation at 4 Gbit/s are reported using these apertures. © 2006 IEEE.
KSP 제안 키워드
Air-gap, Atomic Layer Deposition, Direct modulation, Output power, current confinement